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Q1. prepare the merits of monolithic integration of a large number of functions on the single chip which is generally provide.

Q2. Compare and contrast the CMOS with BJT.

Q3. describe the main purpose of SiO2 layer formation in the MOS transistor and list out all the different methods of SiO2 layer formation.

Q4. What do you mean by Photo-resists? What are its various types and Give illustrations of each?

Q5. What do you mean by Channel-length modulation? Why latch-up problem takes place in MOS device?

Q6. Define the term Entity Declaration. Describe various port-modes used in VHDL.

Q7. Compare and contrast the Mealy and Moore FSM’s.

Electrical & Electronics, Engineering

  • Category:- Electrical & Electronics
  • Reference No.:- M910344

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