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problem 1    

The mobility of free electrons and holes for pure silicon are 0.13 and 0.05 m2/V-S respectively. Find the intrinsic conductivity for silicon. Supposing ni = 1.5x 1016/cm3 at room temperature.

Use the relation: σ = q.nin + µp)

problem 2    

The mobility of free electrons and holes in pure germanium are 0.38 and 0.18 m2/V-s. Find the intrinsic conductivity for germanium. Supposing ni = 2.5x 1019/m3 at room temperature.

Use the relation: σ = q.ni (µn + µp)

problem 3    

A specimen of silicon is 0.2 mm long and has a cross-section of 0.2 x 0.2 mm. One volt connected across this bar results in a current of 8 mA. Supposing that the current is because of electrons, find out (a) concentrations of free electrons and (b) the drift velocity. The room temperature value of mobility is: µn = 1300 cm2/V-S

problem 4     

In a germanium sample, a donor impurity is added to the extent of 1 atom per 108 germanium atoms. Show that the resistivity of the germanium sample drops to 3.7 ohm-cm.
Given: µn = 3800 cm2/V-S and µp = 1800 cm2/V-S and ni = 2.5x 1013/cm3 at room temperature, Nger = 4.41x 1022 /cm3

problem 5     

An N-type semiconductor has a resistivity of 20 x 10-2 ohm-m. The mobility of the electrons through a separate experiment was found to be 100 x 10-4 m2/V-S. Find the electron concentration in this material.

Electrical & Electronics, Engineering

  • Category:- Electrical & Electronics
  • Reference No.:- M9824

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