Task

Title: Design and DC Analysis of Transistor Biasing Circuits

Objectives: To design, analyse and compare BJT(bipolar junction transistor) and FET(field effect transistor) practical transistor circuit using commercially available electronic components.

Part 1:

-Choose one BJT npn transistor and one FET n-channel transistor that could be found in Multisim or equivalent software.

-Find and print out the datasheet for both transistors

-Design and stimulate a voltage divider biasing circuit configuration for both transistors, Q-point should be designed so that it will have the following values:

BJT:

• I_CQ = 12mA
• V_CEQ = depends on your circuit, but must be at the center of your load line.
• Power supply = between 12 V and 24V

FET:

• I_D = 2mA at V_GS = 0V
• I_DQ and V_GSQ are at the center of Shockley's curve.
• Power supply = between 12V and 24V.

-You could use non-standard resistors value for your design in this part

Part 2:

For both of your transistor biasing circuit in Part 1, change at the resistors value to their nearest standard values.

Re-stimulate your design, compares your new Q-point values with the Q-point obtained in Part 1.

Is it possible to get the designed Q-point values using all standard resistors.

Please discuss and analyse the Q-points from part 1 and part 2.