1) What do you mean by electrostatic deflection sensitivity?
2) Electron is accelerated through the potential of 40v before it enters magnetic field density 0.91 wb/m2 at the angle of 30 degrees with the field. Determine the position of electron after which it has one revolution in field?
3) Design the circuit of positive voltage clamper in detail.
4) Reverse bias saturation current for PN junction. diode is 10μA, at 300ok. Compute the diode current for the forward bias voltage of 06v at 25oc.
5) What do you mean by by Q point?
6) Draw the Re model of CE transistor configuration. describe it in detail.
7) Describe in detail, why the performance of MOSFET is superior compared to JFET?
8) For the applied gate source voltage Vgs=-2v and Idss=2ma, pinch off voltage V=-4v. Determine the transconductance Gn of the N-channel JFET.
9) prepare down the materials which are used in LED?
10) Design the equivalent circuit of the varactor diode and prepare down three applications.