In discussion of the silicon MOSFET development, one set of the problems that hindered the technology was surface effects, these surface effects originate from dangling bonds at the surface of silicon.

a) calculate the number of si atoms/cm2 on the (100) surface of silicon. How many dangling bonds do you expect from your surface atom? How many dangling bonds/cm2 do you expect for the (100) si surface.
b) Calculate the number of dangling bonds that may be included under the gate of a MOSFET for 45 nm technology.
c) Oxidation, essential to MOSFET technology, help "passivate" the dangling bonds, what that means?
d) Oxidation itself not enough to passivate the bonds. Describe an additional process step used in the fabrication of MOSFETs used to help passivate surface states.