Determine the transconductance in the saturation region for the n-channel MOSFET using the following paramters at room temperature.
1. p type Si density = 2.8*10^15 /cm^3
2. Si intrinsic carrier concentration = 8.6*10^9 /cm^3
3. Metal-semiconductor work function difference = -1.01 V
4. Qss/q = 2*10^10 /cm^2
5. oxide thickness = 1000 A (1*10^-7 m)
6. Si electron mobility 600 cm^2/V-sec
7. Channel length = 16 microns
8. Channel width = 30 microns
9. Gate Voltage = 3v, no charge distribution inside oxide