Ask Question, Ask an Expert

+1-415-315-9853

info@mywordsolution.com

Ask Electrical & Electronics Expert

problem 1:

a) What do you mean by the term potential energy barrier of the p-n junction? How does it arise and what is its order of magnitude?

b) Sketch the V-I characteristics of p-n junction diode for forward bias voltages. Differentiate between the incremental resistance and the apparent resistance of the diode.

problem 2:

a) Describe in detail, the reason for exponential rise in forward characteristic of a diode with appropriate mathematical expression.

b) Describe in detail, the variation of given semiconductor parameters with temperature, Energy gap and Conductivity.

problem 3:

a) Derive an expression for total diode current beginning from Boltzmann relationship in terms of the applied voltage.

b) The reverse saturation current of a silicon p-n function diode at an operating temperature of 270C is 50 nA. find out the dynamic forward and reverse resistances of the diode for applied voltages of 0.8 V and -0.4 V correspondingly.

problem 4:

a) Describe the operation of silicon p-n junction diode and obtain the forward bias and reverse bias Volt-Ampere characteristics.

b) Obtain the transition capacitance CT of a junction diode at a reverse bias voltage of 12 V if CT of the diode is given as 15 PF at a reverse bias of 8 V. Distinguish between transition and diffusion capacitances.

problem 5: Distinguish between:

a) Static and dynamic resistances of a p-n diode.
b) Transition and Diffusion capacitances of a p-n diode.
c) Volt-Ampere characteristics of a single silicon p-n diode and two identical silicon p- n diodes joined in parallel.
d) Avalanche and zener break down mechanisms.

problem 6:

a) Define the given terms for PN diode

•    Dynamic resistance
•    Load line
•    Difference capacitance
•    Reverse saturation current

b) A reverse bias voltage of 90V is applied to a Germanium diode via a resistance R. The reverse saturation current of the diode is 50 µA at an operating temperature of 250C. find out the diode current and voltage for:

i) R = 10 MΩ
ii) R = 100 KΩ

Electrical & Electronics, Engineering

  • Category:- Electrical & Electronics
  • Reference No.:- M93501

Have any Question? 


Related Questions in Electrical & Electronics

Figure p77-4a shows a scheme to transmit two signals m1t

Figure P7.7-4a shows a scheme to transmit two signals m1(t) and m2(t) simultaneously on the same channel (without causing spectral interference). Such a scheme, which transmits more than one signal, is known as signal mu ...

1 discuss briefly the motional emf concept2 what is lenzs

1. Discuss briefly the motional emf concept. 2. What is Lenz's law? 3. How would you orient a loop antenna in order to obtain maximum signal from an incident electromagnetic wave which has its magnetic field linearly pol ...

The state equations of a certain system are given asfind

The state equations of a certain system are given as Find the state equations of the system with w as the state vector. Determine the characteristic roots (eigenvalues) of the matrix A in the original and the transformed ...

Using the frequency sampling method design a linear phase

Using the frequency sampling method, design a linear phase bandstop FIR filter with cutoff frequencies Ω c1 = π/3, Ω c2 = π/2, and L h = 13. Realize the design as a frequency sampling filter.

The size d of droplets produced by a liquid spray nozzle is

The size d of droplets produced by a liquid spray nozzle is thought to depend upon the nozzle diameter D, jet velocity V, and the properties of the liquid ρ, μ, and σ. Rewrite the relation in dimensionless form. Take D, ...

1 fluid flows between two parallel plates a distance h

1. Fluid flows between two parallel plates, a distance h apart. The upper plate moves at velocity, v 0 ; the lower plate is stationary. For what value of pressure gradient will the shear stress at the lower wall be zero? ...

Microelectronics1 what regions are heavily doped n to form

Microelectronics 1. What regions are heavily doped n+ to form ohmic contacts? 2. On the plot to the right. label the horzontal and vertical axis. Indicate the triode and square law regions. The square law region of secon ...

1 draw the symbols for the nand nor xor and xnor gates what

1. Draw the symbols for the NAND, NOR, XOR, and XNOR gates. What is the difference between the Buffer, AND, OR, XOR and the NOT, NAND, NOR, and XNOR gates? 2. Modify the circuit from question 2 to use a second AND gate o ...

Let xt be a signal whose fourier transform xomega is

Let x(t) be a signal whose Fourier transform X(ω) is nonzero only over 3 ≤ |ω| ≤ 9. Further, only frequencies 5 ≤ |ω| ≤ 7 contain useful information (the other frequencies can be considered to contain noise or different ...

1 explain how a 1 bit 4-to-1 mux can calculate any binary

1. Explain how a 1 bit 4-to-1 MUX can calculate any binary Boolean function. Because the MUX can calculate the result of any Boolean function, we call the MUX a univeral operation. 2. In Logism implement an 8 bit 4-to-1 ...

  • 4,153,160 Questions Asked
  • 13,132 Experts
  • 2,558,936 Questions Answered

Ask Experts for help!!

Looking for Assignment Help?

Start excelling in your Courses, Get help with Assignment

Write us your full requirement for evaluation and you will receive response within 20 minutes turnaround time.

Ask Now Help with Problems, Get a Best Answer

WalMart Identification of theory and critical discussion

Drawing on the prescribed text and/or relevant academic literature, produce a paper which discusses the nature of group

Section onea in an atwood machine suppose two objects of

SECTION ONE (a) In an Atwood Machine, suppose two objects of unequal mass are hung vertically over a frictionless

Part 1you work in hr for a company that operates a factory

Part 1: You work in HR for a company that operates a factory manufacturing fiberglass. There are several hundred empl

Details on advanced accounting paperthis paper is intended

DETAILS ON ADVANCED ACCOUNTING PAPER This paper is intended for students to apply the theoretical knowledge around ac

Create a provider database and related reports and queries

Create a provider database and related reports and queries to capture contact information for potential PC component pro