a) What do you mean by the term potential energy barrier of the p-n junction? How does it arise and what is its order of magnitude?
b) Sketch the V-I characteristics of p-n junction diode for forward bias voltages. Differentiate between the incremental resistance and the apparent resistance of the diode.
a) Describe in detail, the reason for exponential rise in forward characteristic of a diode with appropriate mathematical expression.
b) Describe in detail, the variation of given semiconductor parameters with temperature, Energy gap and Conductivity.
a) Derive an expression for total diode current beginning from Boltzmann relationship in terms of the applied voltage.
b) The reverse saturation current of a silicon p-n function diode at an operating temperature of 270C is 50 nA. find out the dynamic forward and reverse resistances of the diode for applied voltages of 0.8 V and -0.4 V correspondingly.
a) Describe the operation of silicon p-n junction diode and obtain the forward bias and reverse bias Volt-Ampere characteristics.
b) Obtain the transition capacitance CT of a junction diode at a reverse bias voltage of 12 V if CT of the diode is given as 15 PF at a reverse bias of 8 V. Distinguish between transition and diffusion capacitances.
problem 5: Distinguish between:
a) Static and dynamic resistances of a p-n diode.
b) Transition and Diffusion capacitances of a p-n diode.
c) Volt-Ampere characteristics of a single silicon p-n diode and two identical silicon p- n diodes joined in parallel.
d) Avalanche and zener break down mechanisms.
a) Define the given terms for PN diode
• Dynamic resistance
• Load line
• Difference capacitance
• Reverse saturation current
b) A reverse bias voltage of 90V is applied to a Germanium diode via a resistance R. The reverse saturation current of the diode is 50 µA at an operating temperature of 250C. find out the diode current and voltage for:
i) R = 10 MΩ
ii) R = 100 KΩ