problem 1: Define the term threshold voltage of a MOS device and describe its significance.
problem 2: Describe the effect of threshold voltage on MOSFET current Equations.
problem 3: Design a stick diagram for two input n-MOS NAND and NOR gates.
problem 4: Design a layout diagram for two input nMOS NAND gate.
problem 5: What do you mean by the term layout of a component?
problem 6: Draw neat layout diagrams for NMOS and PMOS transistor.
problem 7: A MOS Transistor in the active region measured to have a drain current of 20µA when VDS = Veff. When VDS is increased by 0.5V, ID increases to 23 µA. Estimate the out impedance rds, and the out impedance constant λ.
a) With neat sketches describe the formation of the inversion layer in P-channel Enhancement MOSFET.
b) An NMOS Transistor is operated in the triode region with the given parameters VGS = 4V; Vtn = 1V; VDS = 2V; W/L = 100; µnCox = 90 µA/V2. Find its drain current and drain source resistance.
problem 9: Describe about the given two oxidation methods.
a) High pressure oxidation.
b) Plasma oxidation.
problem 10: What is a stick diagram and describe about different symbols used for components in stick diagram.