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problem 1: Define the term threshold voltage of a MOS device and describe its significance.

problem 2: Describe the effect of threshold voltage on MOSFET current Equations.

problem 3: Design a stick diagram for two input n-MOS NAND and NOR gates.

problem 4: Design a layout diagram for two input nMOS NAND gate.

problem 5: What do you mean by the term layout of a component?

problem 6: Draw neat layout diagrams for NMOS and PMOS transistor.

problem 7: A MOS Transistor in the active region measured to have a drain current of 20µA when VDS = Veff. When VDS is increased by 0.5V, ID increases to 23 µA. Estimate the out impedance rds, and the out impedance constant λ.

problem 8:

a) With neat sketches describe the formation of the inversion layer in P-channel Enhancement MOSFET.
b) An NMOS Transistor is operated in the triode region with the given parameters VGS = 4V; Vtn = 1V; VDS = 2V; W/L = 100; µnCox = 90 µA/V2. Find its drain current and drain source resistance.

problem 9: Describe about the given two oxidation methods.

a) High pressure oxidation.
b) Plasma oxidation.

problem 10: What is a stick diagram and describe about different symbols used for components in stick diagram.

Electrical & Electronics, Engineering

• Category:- Electrical & Electronics
• Reference No.:- M93541

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