problem 1: Define the term threshold voltage of a MOS device and describe its significance.
problem 2: Describe the effect of threshold voltage on MOSFET current Equations.
problem 3: Design a stick diagram for two input n-MOS NAND and NOR gates.
problem 4: Design a layout diagram for two input nMOS NAND gate.
problem 5: What do you mean by the term layout of a component?
problem 6: Draw neat layout diagrams for NMOS and PMOS transistor.
problem 7: A MOS Transistor in the active region measured to have a drain current of 20µA when VDS = Veff. When VDS is increased by 0.5V, ID increases to 23 µA. Estimate the out impedance rds, and the out impedance constant λ.
problem 8:
a) With neat sketches describe the formation of the inversion layer in P-channel Enhancement MOSFET.
b) An NMOS Transistor is operated in the triode region with the given parameters VGS = 4V; Vtn = 1V; VDS = 2V; W/L = 100; µnCox = 90 µA/V2. Find its drain current and drain source resistance.
problem 9: Describe about the given two oxidation methods.
a) High pressure oxidation.
b) Plasma oxidation.
problem 10: What is a stick diagram and describe about different symbols used for components in stick diagram.