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Q1.

a) How a substrate is made for fabricating on IC? Describe CZ process.

b) Define the term Diffusion Process. Describe Fick’s first law of diffusion.

Q2.

a) Compute the expression for depletion width of an MOS transistor subjected for the external bias.

b) Describe the effect of VSB voltage on the MOS transistor threshold voltage.

Q3.

a) Describe the CMOS inverter and give its DC characteristics.

b) Give a logic circuit illustration in which stuck-at-‘1’ fault and stuck-at-‘0’ fault are distinguishable.

Q4.

a) Design a Full CMOS XOR gate and describe its working operation.

b) Describe Transmission Gate working operations in various regions.

Q5.

a) Categorize Semiconductor Memories according to the kind of data storage and kind of data access methods.

b) Draw and describe the behavioral model of positive edge triggered T flip-flop.

Q6.

a) Describe the capacitances related with the MOSFET.

b) prepare detail notes on:

  • Scaling of MOS Transistor dimension.
  • Trends in VLSI Technology.

 

Electrical & Electronics, Engineering

  • Category:- Electrical & Electronics
  • Reference No.:- M910346

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