Consider an n-type Si sample with doping concentration Nd = 2x10^17 cm^-3.
(Eg = 1.1 eV, kT = 0.026 eV and ni = 1.3x10^10 cm^-3 at 300K)
(a) Where is the Fermi level (Ef) relative to intrinsic level (Ei) at 300K?
(b) Calculate the Fermi level position relative to conduction band (Ec-Ef) and relative to valence band (Ef-Ev).
(c) Draw a band diagram showing all of the energy level positions calculated.