An npn BJT has an emitter area of 2micrometer^2. The doping concentration in the base is Nb=3x10^16/cm^3. The BJT is operating with Vt=26mV and ni=1.5x10^10/cm^3. For electrons diffusing thru the base Dn=34cm^2/s. The early votlage is equal to 10V.
2. A base-emitter voltage, Vbe, of 0.75V and a collector-base voltage, Vcb, of 2V is applied to the transistor. Which collector current when operating under these conditions?