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A semiconductor device is characterized by the idealized energy band diagram in the figure below. It is also known that EG = 1.12eV, ni = 1010 cm-3, and kT = 0.0259 eV. Also, μn = 1345 cm2 V-1 - sec-1 and μp =458cm2V-1-sec-1 atbothx=xa andx=xb.
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