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A p-n junction is made by doping Silicon with donors and acceptors. The doping at the p side has a uniform density of NA, but the doping density at the n side is not uniform and changes linearly with the distance from the metallurigical junction. The doping density in the n side can be expressed by:

ND=N0x for 0<=x<=xn

Please find:

1- Electric field in the device (find two equation which express the electric field versus x in the n and p regions)

2- Plot the electric field

3- The maximum electric field

4- The voltage profile in the device (equations)

5- xn,xpandW

6- Cj

Remember that in this case NAxp(not equal)NDxn, but the hatched area under the curves for ND and NA should be the same.

Electrical & Electronics, Engineering

  • Category:- Electrical & Electronics
  • Reference No.:- M9832349

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