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What material parameter values are necessary so that at V_G =0, AI/SiO₂/Si MOSC has the condition of (a) flat-band, (b) intrinsic surface, (c) onset of strong inversion, and (d) in strong inversion with V_S-= 2V_F+4kT/q?

If it is not possible to achieve some of these conditions using the Al gate, replace it with doped Si gate and determine the doping needed. These are important design conditions for MOST switches or inverters discussed in chapter 6.

For exampies, (b) would give zero threshold in a low-current circuit designed to operate in the subthreshold range, and (d) would give the depletion load transistor in the inverted circuit using an induced inversion channel instead of a doped channel which would require an additional ion implantation step.

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