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1)(a) Boron-doped crystal is measured at its seed end with the four point probe of spacing 1mm. (V/I) reading is 10Ω. Determine the seed end doping and expected reading at 0.95 fractions solidified. Develop the processing scheme to make selectively planner recessed oxide in silicon. Describe the growth of a czochralski crystal in detail.

2) Some high-resolution photo resists are also good electron resists with q=20μC/cm2. Assume 20% of chip area is scanned by beam, the field size is F=6mm, the step-repeat and overhead times are tsr=0.4S/field and toh=0.3S/field, and there are 190 chips/water. Compute through put for I=102nA. What is meant by annealing? Describe briefly the furnace annealing and rapid thermal annealing procedures.

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