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Question: A silicon diode has doping concentrations on the N and P sides of N_D = 1 X 10⁹ cm^-3 and of N_A = 1 X 10¹⁵cm^-3. Calculate the process temperature at which each of the two sides of the diode becomes intrinsic. (Intrinsic is defined as n, = N_D or N_A.)

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