(Answered) Problem 1a calculate the intrinsic carrier concentration n

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Problem 1:

a) Calculate the intrinsic carrier concentration, n, at T = 200 and 400K for silicon and GaAs

b) If silicon is doped with a donor concentration of N_d = 10^16 cm^-3 , what is the position of the Fermi level at room temperature (assume all the donor atoms are ionized)

c) If the electron concentration of silicon (at room temperature) is n_0 = 3 x 10^4 cm^-3 , what is the hole concentration, p_0?

d) Is the material n- or p-type?

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