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High voltage (100 to 400 Volts) and medium speed (1-20 MHz) MOS transistors and integrated circuits have been designed and volume produced in 1990 to drive non-impact printers (electrostatic or xerographic printers) and flat display panels (vacuum fluorescent displays used in automobiles and appliances, plasma display panels In computer monitors, electroluminescent displays), and in medical ultrasound imaging, diagnostic telecommunications, avionics, instrumentation, and industrial control equipment. The transistor dimension is larger to withstand the higher voltage and the gate oxide thickness is scaled in proportion and is about 500A.

(a) How long does it take to grow the oxide in dry oxygen at 10000C?

(b) How long does it take to grow the oxide In steam at 900C?

(c) What is the capacitance of the oxide layer per unit area in pF/cm2? If the gate area is 5μm• 500μm, what is the gate capacitance?

(d) What is the load resistance of the previous stage that drives the gate in order that the RC time constant of the gate meets the 20MHz speed requirement?

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