You are managing a semiconductor fabrication line and have been told to increase the rate of production of phosphorous doped silicon wafers. Based on the source of phosphorous (which cannot be changed) the surface concentration is 400 P atoms per 10 million Si atoms (see example 5-6 in the textbook). Estimate the temperature you should dope at (°C) if you must have a concentration of 100 P atoms per 10 million Si atoms at a depth of 10 nm in 5 minutes. (Note this scenario is a bit unrealistic as the surface concentration of P atoms will also be temperature dependent. However, this introduces a non-linearity into the problem that is beyond the present purpose).