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Electrons are slowly injected by tunneling Into the SiO₂ from Si in a MOS transistor when a high electric field appears across the oxide. A small but significant fraction, about 10^-4, of the injected electrons will be captured by oxide electron traps in the SiO₂. The transistor will age and the MOS integrated circuit will fail when -10¹¹q/cm² charges are trapped in the oxide.

Calculate the time to failure when 10V is applied to a 100A VLSI oxide. What is the maximum applied voltage to the oxide film for 10-year life?

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Category:- Physics
Reference No.:- M92075667

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