1) prepare down the different factors to be considered for selecting the oxidation techniques. Describe the different oxidation techniques and systems. Describe the electron lithography process with suitable illustration. Describe the feature-size control and anisotropic etch mechanisms with neat and suitable sketches. Describe basic theory of ion implantation that includes physics of ion collisions, its application to compute the range distributions and effect of crystal lattice. Describe Fick’s one-dimensional diffusion equations. describe the following:
(a) Constants diffusivities
(b) Concentration dependent diffusivities
2) prepare down desired properties of metallization for integrated circuits? What is meant patterning? Describe the chemical etching and dry and self-aligned silicides in detail. Describe the new role of metallization in finding device properties. Describe beam-specimen interactions and related analytical techniques in detail. Describe the basic assembly operations in use today for VLSI devices in detail.