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Consider the CMOS inverter circuit shown in Figure 11.6Oa, Ideal n- and p-channel devices arc to be designed with channel lengths of L = 2.5 panda oxide thicknesses of I,,, = 450Å. Assume the inversion channel motilities are one hal it the bulk values The threshold voltages of the n and p-channel transistors arc to be +0.5V and 0.5V. Respectively. The drain current is to be I_D = 0256mA when the input voltage to the inverter is 1.5 V and 1.5 V with V_DD, = 5V The gate material is to be the same in each devices. Determine the type of gate, substrate doping concentrations, and channel widths.

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