Consider an ideal n-channel mosfet with a width-to-length, Ask an Expert

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Consider an ideal n-channel MOSFET with a width-to-length ratio of (W/L) = 10, an electron mobility of µ_n = 400 cm²/V-s, an oxide thickness of t_ox = 475 Å, and a threshold voltage of V_T = +0.65 V.

(a) Determine the maximum value of source resistance so that the saturation trans conductance gms is reduced by no more than 20 percent from its ideal value when V_Gs = 5 V.

b) Using the value uf r, calculat in part (a). How much is g_ms reduced from its ideal value when V_GS = 3 V.

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