An inhomogeneously doped si sample is at thermal and, Ask an Expert

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An inhomogeneously doped Si sample is at thermal and electrical equilibrium. By some nonequilibrium measurements at T = 290.14K, it was determined that this Si sample contains an equilibrium internal electric field of 10,000V/cm across a thin layer of 1.0μm thick inside the sample.

What are the electron and hole concentration ratios on the two surfaces of the thin layer, N₁/N₂ and P₁/P₂, to account for this built-in electric field. Use kT/q = 0.0250V at T = 290.14K.

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