A pure and very thin SI slice is placed inside of and in parallel with a parallel-plate capacitor which has a spatially constant electric field. The electron potential energy inside the Si varies linearly with distance in the thickness direction. V(x)=ax where a=2x107V/cm=5-1(V/A) where A-Angstrom unit-10-8cm.
Sketch to scale the E-x energy band diagram of this Si. Plot (below the energy band diagram) the electron and hole concentration N(x) and P(x) from x=-25A to +25A at 21.2C (ni=1010cm-3).
Plot the concentrations first in semilog scale (you get straight lines) then read off a few points from the semilog plot to construct the linear plot.
What impression do you get on the rapidity of the variation of the electron and hole concentrations with position? State quantitatively.