A long (or thick) silicon p/n junction diode, such as the numerical example given in the text, is made on a silicon wafer of 1 mm thick so that the series bulk resistances cannot be neglected. Calculate the cutoff frequency due to the series resistance when the diode is reverse biased, zero, and forward biased at the three voltages in Table.
How does these cut-off frequencies compare with the diffusion-recombination delay (the diffusion-recombination delay time is roughly the lifetime or the G/C time constant and the charging time of the space-charge layer?
Under what application conditions is the series resistance important?
