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(a) How long does it take to grow 800 nm thick oxide layer in a dry oxidation environment at 800 C? (b) What happens if we increase the temperature to 1200 C? (c) Assuming we had deposited the SiO2 layer on a 100 ?m thick wafer. If we polish or etch the SiO2 layer off completely from (a) and (b) , how thick is the remaining wafer?

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