A homogeneously impurity doped silicon has NDD=1.01x1016 phosphor/cm3 and NAA =1.00x1014 boron/cm3, all of which are ionized. What are the electron and hole concentrations at 21.2°C and 362°C. Use Figure or the experimental formulae given in problem to obtain the accurate value of ni at these two temperatures.
Problem:-
The experimental formulae for the intrinsic carrier concentration in silicon was obtained by Morin and Malta at the Bell Telephone Laboratories in 1954 from conductivity and Hall voltage measurements over a wide range of temperature in many n-type and p-type impurity doped silicon single crystals. Their results were fitted to give n12=1.5x1033T3exp(-1.21eV/kT) where k is the Boltzmann constant given by (231.3) (k=8.616x10-5 eV/K, verify k in this unit) and T is the absolute temperature in Kelvin.
Calculate the value of ni at T=300°C and verify your result with that given by Figure.
