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A block of silicon, doped with phosphorus, at room temperature is biased with a potential of 1 V. The cross section during which the current I = 200 A flows is 1 mm× 1 mm, and the length l of the silicon block is 2 cm. suppose the current is distributed uniformly over the cross section.

1. Is the doped silicon a conductor, semiconductor, or insulator?

2. What is the approximate concentration of the doping atoms, ND?

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Reference No.:- M91190801

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