A 1 x 1014 cm-2 phosphorus implant through a 200-nm sio2, Ask an Expert

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A 1 x 10¹⁴cm-²phosphorus implant through a 200-nm SiO₂ mask layer is performed so the peak concentration is at the silicon/SiO₂ interface. An anneal is then performed for 30 min at 1000°C.

Calculate the location of the junction with the substrate doped at 1 x 10¹⁵ cm^-3. Assume no diffusion in the masking layer and ignore any segregation effects.

Assume the same range statistics for SiO2 and Si.

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Category:- Chemistry
Reference No.:- M92602625

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