1. The equilibrium electric potential variation in an n-type Si slice of thickness L Is found to be given by V1(x)-V0+ (VL-V0)(x/L). What are the equilibrium concentrations of electrons and holes as a function of x? Obtain the expressions of the drift and diffusion current densities as a function of x.
2. Let V0 = 0.8V, VL = 0.4V, and L = 10µm, obtain the numerical values of the parameters asked for in problem given.
Problem :-
The equilibrium electric potential variation in an n-type Si slice of thickness L Is found to be given by V1(x)-V0 + (VL-V0)(x/L). What are the equilibrium concentrations of electrons and holes as a function of x? Obtain the expressions of the drift and diffusion current densities as a function of x.