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1. Give a simple reason based on device physics or charge store concept to show that the speed up of the recovery during switch-off transient is given by the ratio, J_F/J_R. Afterwards, show this also mathematically using the solutions given in the text.

2. Obtain the switching transient solutions for a thin-base diode with the p+/n/m structure where n is the thin base of geometrical thickness X_B and X_BB. n/m is a perfect ohmic contact of infinite recombination rate. Use the charge control model and assume minority carrier diffusion dominant. The mathematics is very simple.

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