1 assume 100-kev boron implants on a 200-mm silicon wafer, Ask an Expert

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1. Assume 100-keV boron implants on a 200-mm silicon wafer at a dose of 5 × 10¹⁴ ions/cm². The projected range and project straggle are 0.31 and 0.07 µm, respectively. Calculate the peak concentration and the required ion-beam current for 1 min of implantation.

2. In a CMP process, the oxide removal rate and the removal rate of a layer underneath the oxide (called a stop layer) are 1r and 0.1r, respectively. To remove 1 µm of oxide and a 0.01-µm stop layer, the total removal time is 5.5 min. Find the oxide removal rate.

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