1 a silicon sample is oxidized in dry o2 at 1200 c for one, Ask an Expert

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1. A silicon sample is oxidized in dry O₂ at 1200? C for one hour.

(a) What is the thickness of the oxide grown?

(b) How much additional time is required to grow 0.1 µm more oxide in wet O₂ at 1200? C?

2. Find the parameter γ for the photoresists shown in Figure 2.13.

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