Gallium arsenide (GaAs) and indium arsenide (InAs) both have the zincblende crystal structure and are soluble in each other at all concentrations. Determine the concentration in weight percent of InAs that must be added to GaAs to yield a unit cell edge length of 0.5820nm. The densities of GaAs and InAs are 5:316g=cm3 and 5:668g=cm3, respectively.