Find the accurate solution of the following Problem

Problem- An n-type silicon bar of length L is maintained under steady state conditions such that pn (0) = pn0=1012/cm³ and pn (L)=0. The Si bar is uniformly doped with Nd= 1016/cm3 at room temperature. No other photo-generation of processes occurring inside the bar.

Part 1- Do low level injection conditions prevail? Explain.

Part 2- Show the variation of minority carrier concentration with respect to x.

Part 3- How much is n(x)?

Part 4- What is the position of the quasi -Fermi level inside the bar at (i) x=0, and (ii) x=L?f length L is maintained under steady state conditions such that ?pn(0)=?pn0=1

I need experts help to illustrate the variation of minority carrier concentration with respect to x.